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 INTEGRATED CIRCUITS
DATA SHEET
TDA1519C 22 W BTL or 2 x 11 W stereo power amplifier
Product specification Supersedes data of 2000 Mar 08 File under Integrated Circuits, IC01 2001 Aug 24
Philips Semiconductors
Product specification
22 W BTL or 2 x 11 W stereo power amplifier
FEATURES * Requires very few external components for Bridge-Tied Load (BTL) operation * Stereo or BTL application * High output power * Low offset voltage at output (important for BTL applications) * Fixed gain * Good ripple rejection * Mute/standby switch * Load dump protection * AC and DC short-circuit safe to ground and VP * Thermally protected * Reverse polarity safe * Capability to handle high energy on outputs (VP = 0 V) * No switch-on/switch-off plops * Protected against electrostatic discharge * Low thermal resistance * Identical inputs (inverting and non-inverting) * Pin compatible with TDA1519B (TDA1519C and TDA1519CSP). ORDERING INFORMATION PACKAGE TYPE NUMBER NAME TDA1519C TDA1519CSP TDA1519CTD TDA1519CTH SIL9P SMS9P HSOP20 HSOP20 DESCRIPTION plastic single in-line power package; 9 leads plastic surface mounted single in-line power package; 9 leads plastic, heatsink small outline package; 20 leads GENERAL DESCRIPTION
TDA1519C
The TDA1519C is an integrated class-B dual output amplifier in a 9-lead plastic single in-line power package or 20-lead heatsink small outline package. For the TDA1519CTH (SOT418-2), the heatsink is positioned on top of the package, which allows an external heatsink to be mounted on top. The heatsink of the TDA1519CTD (SOT397-1) is facing the PCB, allowing the heatsink to be soldered onto the copper area of the PCB.
VERSION SOT131-2 SOT354-1 SOT397-1 SOT418-2
plastic, heatsink small outline package; 20 leads; low stand-off height
2001 Aug 24
2
Philips Semiconductors
Product specification
22 W BTL or 2 x 11 W stereo power amplifier
QUICK REFERENCE DATA SYMBOL Supply VP supply voltage operating non-operating load dump protected IORM Iq(tot) Istb Isw(on) Inputs Zi input impedance BTL stereo Stereo application Po output power THD = 10% RL = 4 RL = 2 cs Vn(o)(rms) Po SVRR channel separation noise output voltage (RMS value) THD = 10%; RL = 4 RS = 0 fi = 100 Hz fi = 1 to 10 kHz VOO Tj DC output offset voltage junction temperature 34 48 - - - - - - - - 40 - - 6 11 - 150 25 50 - - repetitive peak output current total quiescent current standby current switch-on current 6.0 - - - - - - 14.4 - - - 40 0.1 - PARAMETER CONDITIONS MIN.
TDA1519C
TYP.
MAX.
UNIT
17.5 30 45 4 80 100 40 - -
V V V A mA A A k k
- - - - - - - 250 150
W W dB V W dB dB mV C
BTL application output power supply voltage ripple rejection 22
2001 Aug 24
3
Philips Semiconductors
Product specification
22 W BTL or 2 x 11 W stereo power amplifier
BLOCK DIAGRAM
TDA1519C
handbook, full pagewidth
NINV
1 60 k
mute switch Cm
VA 183 18.1 k power stage
4
OUT1
VP standby switch VA 15 k x1 RR 3 15 k
+ -
standby reference voltage
8
M/SS
+ + -
mute reference voltage
mute switch
TDA1519C TDA1519CSP
18.1 k power stage 183 6 VA INV 9 60 k input reference voltage mute switch signal ground 2 GND1 7 VP 5
MGL491
OUT2
Cm
power ground (substrate)
GND2
The pin numbers refer to the TDA1519C and TDA1519CSP only, for TDA1519CTD and TDA1519CTH see Figs 3 and 4.
Fig.1 Block diagram.
2001 Aug 24
4
Philips Semiconductors
Product specification
22 W BTL or 2 x 11 W stereo power amplifier
PINNING PIN SYMBOL NINV GND1 RR OUT1 GND2 OUT2 VP M/SS INV n.c. TDA1519C; TDA1519CSP 1 2 3 4 5 6 7 8 9 -
TDA1519C
DESCRIPTION TDA1519CTD 19 20 1 3 5 8 10 11 12 TDA1519CTH 19 20 1 3 5 8 10 11 12 non-inverting input ground 1 (signal) supply voltage ripple rejection output 1 ground 2 (substrate) output 2 positive supply voltage mute/standby switch input inverting input
2, 4, 6, 7, 9 and 13 to 18 2, 4, 6, 7, 9 and 13 to 18 not connected
halfpage
fpage
fpage
NINV 1 GND1 2 RR 3 OUT1 4 GND2 5 OUT2 6 VP 7 M/SS 8 INV 9
MGR561
RR 1 n.c. 2 OUT1 3 n.c. 4
20 GND1 19 NINV 18 n.c. 17 n.c. 16 n.c.
GND1 20 NINV 19 n.c. 18 n.c. 17 n.c. 16
1 2 3 4 5
RR n.c. OUT1 n.c. GND2 n.c. n.c. OUT2 n.c.
TDA1519C TDA1519CSP
GND2 5
TDA1519CTD
n.c. 6 n.c. 7 OUT2 8 n.c. 9 VP 10
MGL937
TDA1519CTH
15 n.c. 14 n.c. 13 n.c. 12 INV 11 M/SS n.c. 15 n.c. 14 n.c. 13 INV 12 M/SS 11
MGL936
6 7 8 9
10 VP
Fig.2
Pin configuration TDA1519C and TDA1519CSP.
Fig.3
Pin configuration TDA1519CTD.
Fig.4
Pin configuration TDA1519CTH.
2001 Aug 24
5
Philips Semiconductors
Product specification
22 W BTL or 2 x 11 W stereo power amplifier
FUNCTIONAL DESCRIPTION The TDA1519C contains two identical amplifiers with differential input stages. The gain of each amplifier is fixed at 40 dB. A special feature of this device is the mute/standby switch which has the following features: * Low standby current (<100 A)
TDA1519C
* Low mute/standby switching current (allows for low-cost supply switch) * Mute condition.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VP PARAMETER supply voltage CONDITIONS operating non-operating load dump protected; during 50 ms; tr 2.5 ms Vsc Vrp Eo IOSM IORM Ptot Tj Tstg AC and DC short-circuit-safe voltage reverse polarity voltage energy handling capability at outputs non-repetitive peak output current repetitive peak output current total power dissipation junction temperature storage temperature see Fig.5 VP = 0 V - - - - - - - - - - -55 MIN. MAX. 17.5 30 45 17.5 6 200 6 4 25 150 +150 UNIT V V V V V mJ A A W C C
MGL492
handbook, halfpage
30
Ptot (W) 20
(1)
(2)
10
(3)
0 -25
0
50
100 150 Tamb (C)
(1) Infinite heatsink. (2) Rth(c-a) = 5 K/W. (3) Rth(c-a) = 13 K/W.
Fig.5 Power derating curve for TDA1519C.
2001 Aug 24
6
Philips Semiconductors
Product specification
22 W BTL or 2 x 11 W stereo power amplifier
THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Rth(j-c) PARAMETER CONDITIONS VALUE 40 3
TDA1519C
UNIT K/W K/W
thermal resistance from junction to ambient; in free air TDA1519C, TDA1519CTH and TDA1519CTD thermal resistance from junction to case; TDA1519C, TDA1519CTH and TDA1519CTD
DC CHARACTERISTICS VP = 14.4 V; Tamb = 25 C; measured in circuit of Fig.6; unless otherwise specified. SYMBOL Supply VP Iq(tot) VO VOO Vsw(on) Vmute Vstb Vo VOO Istb Isw(on) Notes 1. The circuit is DC adjusted at VP = 6 to 17.5 V and AC operating at VP = 8.5 to 17.5 V. 2. At VP = 17.5 to 30 V, the DC output voltage is 0.5VP. supply voltage total quiescent current DC output voltage DC output offset voltage note 2 note 1 6.0 - - - 8.5 3.3 0 - - - - 14.4 40 6.95 - - - - - - - 12 17.5 80 - 250 - 6.4 2 V mA V mV PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Mute/standby switch switch-on voltage level mute voltage level standby voltage level V V V
Mute/standby condition output voltage DC output offset voltage standby current switch-on current mute mode; Vi = 1 V (maximum); fi = 20 Hz to 15 kHz mute mode standby mode 20 250 100 40 mV mV A A
2001 Aug 24
7
Philips Semiconductors
Product specification
22 W BTL or 2 x 11 W stereo power amplifier
AC CHARACTERISTICS VP = 14.4 V; RL = 4 ; f = 1 kHz; Tamb = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP.
TDA1519C
MAX.
UNIT
Stereo application (see Fig.6) Po output power note 1 THD = 0.5% THD = 10% RL = 2 ; note 1 THD = 0.5% THD = 10% THD fro(l) fro(h) Gv(cl) SVRR total harmonic distortion low frequency roll-off high frequency roll-off closed-loop voltage gain supply voltage ripple rejection on; notes 3 and 4 on; notes 3 and 5 mute; notes 3 and 6 standby; notes 3 and 6 Zi Vn(o)(rms) input impedance noise output voltage (RMS value) note 7 on; RS = 0 on; RS = 10 k mute; note 8 cs Gv(ub) Po channel separation channel unbalance RS = 10 k - - - 40 - note 1 THD = 0.5% THD = 10% VP = 13.2 V; note 1 THD = 0.5% THD = 10% THD Bp total harmonic distortion power bandwidth Po = 1 W THD = 0.5%; Po = -1 dB; with respect to 15 W -1 dB; note 2 -1 dB - - - - 13 17.5 0.1 35 to 15000 - - - - W W % Hz 15 20 17 22 - - W W 150 250 120 - 0.1 - 500 - - 1 V V V dB dB Po = 1 W -3 dB; note 2 -1 dB 7.5 10 - - 20 39 40 45 45 80 50 8.5 11 0.1 45 - 40 - - - - 60 - - - - - 41 - - - - 75 W W % Hz kHz dB dB dB dB dB k 4 5.5 5 6.0 - - W W
BTL application (see Fig.7) output power
fro(l) fro(h) Gv(cl)
low frequency roll-off high frequency roll-off closed-loop voltage gain
- 20 45
45 - 46
- - 47
Hz kHz dB
2001 Aug 24
8
Philips Semiconductors
Product specification
22 W BTL or 2 x 11 W stereo power amplifier
SYMBOL SVRR PARAMETER supply voltage ripple rejection CONDITIONS on; notes 3 and 4 on; notes 3 and 5 mute; notes 3 and 6 standby; notes 3 and 6 Zi Vn(o)(rms) input impedance noise output voltage (RMS value) note 7 on; RS = 0 on; RS = 10 k mute; note 8 Notes 1. Output power is measured directly at the output pins of the device. 2. Frequency response externally fixed. - - - 200 350 180 MIN. 34 48 48 80 25 - - - - 30 TYP.
TDA1519C
MAX. - - - - 38 - 700 -
UNIT dB dB dB dB k V V V
3. Ripple rejection measured at the output with a source impedance of 0 (maximum ripple amplitude of 2 V). 4. Frequency f = 100 Hz. 5. Frequency between 1 and 10 kHz. 6. Frequency between 100 Hz and 10 kHz. 7. Noise voltage measured in a bandwidth of 20 Hz to 20 kHz. 8. Noise output voltage independent of RS (Vi = 0 V).
2001 Aug 24
9
Philips Semiconductors
Product specification
22 W BTL or 2 x 11 W stereo power amplifier
APPLICATION INFORMATION
TDA1519C
handbook, full pagewidth
standby switch 100 F 3 input reference voltage internal 1/2 VP 8 7 100 nF 2200 F VP
-
60 k 220 nF non-inverting input 1
TDA1519C
+
40 dB
+
40 dB
-
60 k 9 220 nF inverting input
2
5
4
6
MGL493
signal ground
power ground 1000 F
Fig.6 Stereo application diagram (TDA1519C).
handbook, full pagewidth
standby switch VP 3 input reference voltage internal 1/2 VP 8 7 100 nF 2200 F
-
60 k 220 nF non-inverting input 1
TDA1519C
+
40 dB
+
40 dB
-
60 k 9
to pin 9
2
5
4
6
MGL494
to pin 1
signal ground
power ground
RL = 4
Fig.7 BTL application diagram (TDA1519C).
2001 Aug 24
10
Philips Semiconductors
Product specification
22 W BTL or 2 x 11 W stereo power amplifier
TDA1519C
handbook, halfpage
60
MGR539
Iq(tot) (mA)
50
40
30
0
4
8
12
16 VP (V)
20
Fig.8 Total quiescent current as a function of the supply voltage.
handbook, halfpage
30
MGR540
Po (W) 20
THD = 10%
10 0.5%
0
0
4
8
12
16 VP (V)
20
BTL application. RL = 4 . fi = 1 kHz.
Fig.9 Output power as a function of the supply voltage.
2001 Aug 24
11
Philips Semiconductors
Product specification
22 W BTL or 2 x 11 W stereo power amplifier
TDA1519C
MGR541
handbook, halfpage
12
THD (%) 8
4
0 10-1
1
10
Po (W)
102
BTL application. RL = 4 . fi = 1 kHz.
Fig.10 Total harmonic distortion as a function of the output power.
MGU377
handbook, halfpage
0.6
THD (%) 0.4
0.2
0 10
102
103
fi (Hz)
104
BTL application. RL = 4 . Po = 1 W.
Fig.11 Total harmonic distortion as a function of the operating frequency.
2001 Aug 24
12
Philips Semiconductors
Product specification
22 W BTL or 2 x 11 W stereo power amplifier
PACKAGE OUTLINES SIL9P: plastic single in-line power package; 9 leads
TDA1519C
SOT131-2
non-concave x Dh
D Eh
view B: mounting base side d A2
B seating plane j E
A1 b
L
c 1 Z e bp wM 0 5 scale DIMENSIONS (mm are the original dimensions) UNIT mm Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT131-2 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION A1 max. 2.0 A2 4.6 4.4 b max. 1.1 bp 0.75 0.60 c 0.48 0.38 D (1) 24.0 23.6 d 20.0 19.6 Dh 10 E (1) 12.2 11.8 e 2.54 Eh 6 j 3.4 3.1 L 17.2 16.5 Q 2.1 1.8 w 0.25 x 0.03 Z (1) 2.00 1.45 10 mm 9 Q
ISSUE DATE 95-03-11 99-12-17
2001 Aug 24
13
Philips Semiconductors
Product specification
22 W BTL or 2 x 11 W stereo power amplifier
TDA1519C
SMS9P: plastic surface mounted single in-line power package; 9 leads
SOT354-1
D
y
non-concave x
d Dh
heatsink
A2
heatsink Eh j E
Q A1 L Lp c 9 Z e bp wM 1 (A3) A
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.9 4.2 A1 0.35 0.05 A2 4.6 4.4 A3 0.25 bp 0.75 0.60 c 0.48 0.38 D(1) d Dh 10 E(1) e Eh 6 j 3.4 3.1 L 7.4 6.6 Lp 3.4 2.8 Q 2.1 1.9 w x y 0.15 Z(1) 2.00 1.45 3 0
24.0 20.0 23.6 19.6
12.2 2.54 11.8
0.25 0.03
Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT354-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION
ISSUE DATE 98-10-08 99-12-17
2001 Aug 24
14
Philips Semiconductors
Product specification
22 W BTL or 2 x 11 W stereo power amplifier
TDA1519C
HSOP20: plastic, heatsink small outline package; 20 leads
SOT397-1
D
E E2
A X
c y HE vM A
D1 D2 20 11
Q A2 E1 pin 1 index A1 A4 (A3) Lp detail X 1 Z e 10 bp wM A
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A A1 max. 3.6 0.3 0.1 A2 3.3 3.0 A3 0.35 A4 0.1 0 bp c D(1) D1 D2 1.1 0.9 E(1) 11.1 10.9 E1 6.2 5.8 E2 2.9 2.5 e 1.27 HE 14.5 13.9 Lp 1.1 0.8 Q 1.5 1.4 v w y 0.1 Z 2.5 2.0 8 0
0.53 0.32 16.0 13.0 0.40 0.23 15.8 12.6
0.25 0.25
Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT397-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION
ISSUE DATE 97-11-03 99-11-12
2001 Aug 24
15
Philips Semiconductors
Product specification
22 W BTL or 2 x 11 W stereo power amplifier
TDA1519C
HSOP20: plastic, heatsink small outline package; 20 leads; low stand-off height
SOT418-2
E D x
A X
c y E2 HE vM A
D1 D2 1 pin 1 index Q A2 E1 A4 Lp detail X 20 Z e bp 11 wM (A3) A 10
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A A2 max. 3.5 3.5 3.2 A3 0.35 A4(1) bp c D(2) D1 D2 1.1 0.9 E(2) 11.1 10.9 E1 6.2 5.8 E2 2.9 2.5 e 1.27 HE 14.5 13.9 Lp 1.1 0.8 Q 1.7 1.5 v w x y Z 2.5 2.0 8 0
+0.12 0.53 0.32 16.0 13.0 -0.02 0.40 0.23 15.8 12.6
0.25 0.25 0.03 0.07
Notes 1. Limits per individual lead. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT418-2 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION
ISSUE DATE 98-02-25 99-11-12
2001 Aug 24
16
Philips Semiconductors
Product specification
22 W BTL or 2 x 11 W stereo power amplifier
SOLDERING Introduction This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "Data Handbook IC26; Integrated Circuit Packages" (document order number 9398 652 90011). There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mount components are mixed on one printed-circuit board. Wave soldering can still be used for certain surface mount ICs, but it is not suitable for fine pitch SMDs. In these situations reflow soldering is recommended. Through-hole mount packages SOLDERING BY DIPPING OR BY SOLDER WAVE The maximum permissible temperature of the solder is 260 C; solder at this temperature must not be in contact with the joints for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg(max)). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. MANUAL SOLDERING Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 C, contact may be up to 5 seconds. Surface mount packages REFLOW SOLDERING Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method.
TDA1519C
Typical reflow peak temperatures range from 215 to 250 C. The top-surface temperature of the packages should preferable be kept below 220 C for thick/large packages, and below 235 C for small/thin packages. WAVE SOLDERING Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the double-wave soldering method was specifically developed. If wave soldering is used the following conditions must be observed for optimal results: * Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. * For packages with leads on two sides and a pitch (e): - larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; - smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end. * For packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. MANUAL SOLDERING Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C. 17
2001 Aug 24
Philips Semiconductors
Product specification
22 W BTL or 2 x 11 W stereo power amplifier
Suitability of IC packages for wave, reflow and dipping soldering methods
TDA1519C
SOLDERING METHOD MOUNTING PACKAGE WAVE Through-hole mount DBS, DIP, HDIP, SDIP, SIL Surface mount BGA, HBGA, LFBGA, SQFP, TFBGA HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, SMS PLCC(4), SO, SOJ LQFP, QFP, TQFP SSOP, TSSOP, VSO Notes 1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the "Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods". 2. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. 3. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 4. If wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 5. Wave soldering is only suitable for LQFP, QFP and TQFP packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 6. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. suitable(2) not suitable not suitable(3) suitable not recommended(4)(5) not recommended(6) REFLOW(1) DIPPING - suitable suitable suitable suitable suitable suitable - - - - -
2001 Aug 24
18
Philips Semiconductors
Product specification
22 W BTL or 2 x 11 W stereo power amplifier
DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS
TDA1519C
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2001 Aug 24
19
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
753503/03/pp20
Date of release: 2001
Aug 24
Document order number:
9397 750 08284


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